Superconductivity in Shear Strained Semiconductors

Focus on Superconductivity in Semiconductors.

Current-induced spin polarization in strained semiconductors.

The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the electrically polarized spins are characterized by a combination of optical and electrical methods. In addition, the dynamics of the current-induced spins are investigated ...

Superconductivity in doped sp3 semiconductors: the case of the clathrates.

We present a joint experimental and theoretical study of the superconductivity in doped silicon clathrates. The critical temperature in Ba(8)@Si-46 is shown to strongly decrease with applied pressure. These results are corroborated by ab initio calculations using MacMillan's formulation of the BCS theory with the electron-phonon coupling constant lambda calculated from perturbative density func...

Band Structure Calculations of Strained Semiconductors Using Empirical Pseudopotential Theory

BAND STRUCTURE CALCULATIONS OF STRAINED SEMICONDUCTORS USING EMPIRICAL PSEUDOPOTENTIAL THEORY FEBRUARY 2011 JISEOK KIM B.S., KYUNGHEE UNIVERSITY SEOUL M.S., BALL STATE UNIVERSITY MUNCIE Ph.D., UNIVERSITY OF MASSACHUSETTS AMHERST Directed by: Professor Massimo V. Fischetti Electronic band structure of various crystal orientations of relaxed and strained bulk, 1D and 2D confined semiconductors ar...

DAFS Study of Strained III-V Epitaxial Semiconductors

The effect of built-in strain on IlI-V epitaxial semiconductors has been investigated by Diffraction Anomalous Fine Smcture (DAFS). We study two different systems in a different strain regime: a Strained Layer Superlattice of (GaP)2(InP)3 grown on a GaAs(001) substrate, and a single epilayer of G a A ~ l ~ p ~ , (x=0.225), also grown on a GaAs (001) substrate. In the first case the strain is ac...